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1

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)

Suto, Takeru, Watanabe, Naoki, Bu, Yuan, Miki, Hiroshi, Tega, Naoki, Mori, Yuki, Hisamoto, Digh, Shima, Akio

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.54 MB

2019

2

Quantum Dipole Effects in a Silicon Transistor under High Electric Fields

Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Tomita, Isao, Tsuchiya, Yoshishige, Sasago, Yoshitaka, Arimoto, Hideo, Liu, Fayong, Husain, Muhammad Khaled, Hisamoto, Digh, Rutt, Harvey N., Kurihara, S

Journal:

Journal of the Physical Society of Japan

Year:

2018

Language:

english

File:

PDF, 21.50 MB

english, 2018

3

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

Tega, Naoki, Yoshimoto, Hiroyuki, Hisamoto, Digh, Watanabe, Naoki, Shimizu, Haruka, Sato, Shintaroh, Mori, Yuki, Ishigaki, Takashi, Matsumura, Mieko, Konishi, Kumiko, Kobayashi, Keisuke, Mine, Toshiyu

Year:

2015

Language:

english

File:

PDF, 773 KB

english, 2015

4

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS)

Tega, Naoki, Tani, Kazuki, Hisamoto, Digh, Shima, Akio

Year:

2018

Language:

english

File:

PDF, 1.03 MB

english, 2018

5

[OSA Optical Fiber Communication Conference - San Diego, California (2010..-..)] Optical Fiber Communication Conference - Silicon Quantum Well Light-Emitter for Optical Interconnections

Saito, Shin-ichi, Suwa, Yuji, Arimoto, Hideo, Hisamoto, Digh, Mine, Toshiyuki, Takeda, Kenichi, Sugawara, Toshiki, Aoki, Masahiro

Year:

2010

Language:

english

File:

PDF, 889 KB

english, 2010

6

Alpha-particle induced source-drain penetration (Alpen) effects

Digh Hisamoto, Tohru Toyabe, Eiji Takeda

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

7

Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 343 KB

english, 2011

8

Behavior of fuel droplets across propagating spray flames.

KAWAMATA, Masaaki, SUZUKI, Takuji, HISAMOTO, Digh, HIRANO, Toshisuke

Journal:

Journal of the Fuel Society of Japan

Year:

1990

File:

PDF, 2.57 MB

1990

9

Random telegraph noise from resonant tunnelling at low temperatures

Li, Zuo, Sotto, Moïse, Liu, Fayong, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Hisamoto, Digh, Tomita, Isao, Tsuchiya, Yoshishige, Saito, Shinichi

Journal:

Scientific Reports

Year:

2018

Language:

english

File:

PDF, 3.19 MB

english, 2018

10

[IEEE 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2012.06.10-2012.06.11)] 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - New type steep-S device using the bipolar action

Hisamoto, Digh, Saito, Shin-ichi, Shima, Akio, Yoshimoto, Hiroyuki, Torii, Kazuyoshi

Year:

2012

Language:

english

File:

PDF, 215 KB

english, 2012

11

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories

Hirotaka Hamamura,, Takeshi Ishida,, Toshiyuki Mine,, Yutaka Okuyama,, Digh Hisamoto,, Yasuhiro Shimamoto,, Shin'ichiro Kimura,, Kazuyoshi Torii,

Year:

2008

Language:

english

File:

PDF, 403 KB

english, 2008

12

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - CxFET: A novel steep subthreshold swing CMOS featuring a tunnel-injection bipolar transistor and MOSFET device complex

Hisamoto, Digh, Saito, Shin-ichi, Shima, Akio, Yoshimoto, Hiroyuki, Torii, Kazuyoshi, Takeda, Eiji

Year:

2010

Language:

english

File:

PDF, 241 KB

english, 2010

13

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Saito, Shin-ichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Tsujikawa, Shimpei, Hamamura, Hirotaka, Tonomura, Osamu, Mine, Toshiyuki, Hisamoto, Digh, Onai, Takahiro, Yugami, Jiro, Hiratani, Masahiko, Kim

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 452 KB

english, 2004

14

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Extension of Universal Mobility Curve to Multi-Gate MOSFETs

Yoshimoto, Hiroyuki, Sugii, Nobuyuki, Hisamoto, Digh, Saito, Shin-ichi, Tsuchiya, Ryuta, Kimura, Shin'ichiro

Year:

2007

Language:

english

File:

PDF, 4.02 MB

english, 2007

15

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

Li, Zuo, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Tani, Kazuki, Sasago, Yoshitaka, Hisamoto, Digh, Fletcher, Jonathan David, Kataoka, Masaya, Tsuchiya, Yoshishige, Saito, Shinichi

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.14 MB

english, 2017

16

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

Kazuyoshi Torii, Yasuhiro Shimamoto, Shin-ichi Saito, Katsunori Obata, Tsuyoshi Yamauchi, Digh Hisamoto, Takahiro Onai, Masahiko Hiratani

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 147 KB

english, 2003

17

Remote-charge-scattering limited mobility in field-effect transistors with SiO[sub 2] and Al[sub 2]O[sub 3]∕SiO[sub 2] gate stacks

Saito, Shin-ichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Tonomura, Osamu, Hisamoto, Digh, Onai, Takahiro, Hiratani, Masahiko, Kimura, Shin’ichiro, Manabe, Yukiko, Caymax, Matty, Maes, Jan Willem

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 1.25 MB

english, 2005

18

Electro-Luminescence from Ultra-Thin Silicon

Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin'ichiro, Onai, Ta

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 249 KB

english, 2006

19

Modified Interface State Charge Model for 4H-SiC Power MOSFETs

Hisamoto, Digh, Yoshimoto, Hiroyuki, Tega, Naoki

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 546 KB

english, 2015

20

Silicon light-emitting transistor for on-chip optical interconnection

Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin’ichiro, Onai, Ta

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 947 KB

english, 2006

21

A new field-effect transistor based on the metal–insulator transition

Katayama, Kozo, Hisamoto, Digh, Nakamura, Yoshitaka, Kobayashi, Nobuyoshi, Nagai, Ryo

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 413 KB

english, 1996

22

Device characteristics of MOSFETs with self-aligned punch-through stopper structure

Kazunori Umeda, Digh Hisamoto, Ryoo Nagai, Shinichiro Kimura

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1996

Language:

english

File:

PDF, 528 KB

english, 1996

23

Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures

Ishida, Takeshi, Mine, Toshiyuki, Hisamoto, Digh, Shimamoto, Yasuhiro, Yamada, Ren-ichi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 632 KB

english, 2013

24

[IEEE 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop - Monterey, CA, USA (2007.08.26-2007.08.30)] 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop - Determination of Lateral Charge Distributions of Split-gate SONOS Memories Using Experimental Devices with Nanometer-size Nitride Piece

Okuyama, Yutaka, Furukawa, Tomoyasu, Saito, Tomohiro, Nonaka, Yusuke, Ishimaru, Tetsuya, Yasui, Kan, Hisamoto, Digh, Shimamoto, Yasuhiro, Kimura, Shin'ichiro, Mizuno, Makoto, Toba, Koichi, Okada, Dais

Year:

2007

Language:

english

File:

PDF, 187 KB

english, 2007

25

[IEEE 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Penang, Malaysia (2020.4.6-2020.4.21)] 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Critical Feature Size of Device Manufacturing for Dominating MOSFET Evolutions

Year:

2020

File:

PDF, 143 KB

2020

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